Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability opens doors to high voltage GaN-based power such as in electric cars. Key achieving is careful engineering complex material stack combination use substrates. CMOS-fab friendly have coefficient thermal expansion (CTE) that closely matches CTE GaN/AlGaN layers, paving way thicker large diameter substrates, while maintaining mechanical strength and reaching higher operation.